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High Voltage IGBT
IXSN 55N120A
VCES = 1200 V IC25 = 110 A 4V VCE(sat) =
3
Short Circuit SOA Capability
2
Preliminary Data
4
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC VISOL TJ TJM Tstg Md Weight
Test Conditions T J = 25C to 150C T J = 25C to 150C; RGE = 1 MW Continuous Transient TC = 25C TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 W Clamped inductive load, L = 30 mH VGE = 15 V, VCE = 0.6 VCES, TJ = 125C RG = 22 W, non-repetitive TC = 25C 50/60 Hz IISOL 1 mA IGBT t = 1 min t=1s
Maximum Ratings 1200 1200 20 30 110 55 160 ICM = 110 @ 0.8 VCES 10 500 2500 3000 -55 ... +150 150 -55 ... +150 V A V V A A A A ms W V~ V~ C C C
miniBLOC, SOT-227 B
1 2
4 3 1 = Emitter 2 = Gate 3 = Collector 4 = Emitter
Either Emitter terminal can be used as Main or Kelvin Emitter
Mounting torque Terminal connection torque (M4)
1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
Features International standard package miniBLOC Aluminium-nitride isolation - high power dissipation Isolation voltage 3000 V~ UL registered E 153432 Low VCE(sat) - for minimum on-state conduction losses Low collector-to-case capacitance (<100 pF) - reduces RFI Low package inductance (< 10 nH) - easy to drive and to protect Applications AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Space savings Easy to mount with 2 screws High power density
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 1200 4 TJ = 25C TJ = 125C 8 1 2.5 200 4 V V mA mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 6 mA, VGE = 0 V = 8 mA, VCE = VGE
VCE = 0.8 VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V
IXYS reserves the right to change limits, test conditions, and dimensions.
95594B(6/97)
(c) 2000 IXYS All rights reserved
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IXSN55N120A
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) Min. Typ. Max. 32 45 S miniBLOC, SOT-227 B
gfs IC(on) C ies Coes C res Qg Qge Qgc td(on) t ri td(off) tfi Eoff td(on) t ri td(off) tsi tc E(on) Eoff RthJC RthCK
IC
= IC90; VCE = 10 V
Pulse test, t 300 ms, duty cycle d 2 % VCE = 10 V, VGE = 15 V VCE = 25 V, VGE = 0 V, f = 1 MHz 340 8000 590 120 300 IC = IC90, VGE = 15 V, VCE = 0.5 VCES 80 140 Inductive load, TJ = 25C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 140 220 400 700 18 140 Inductive load, TJ = 125C IC = IC90, VGE = 15 V, VCE = 0.8 VCES, RG = 2.7 W Remarks: Switching times may increase for VCE (Clamp) > 0.8 VCES, higher TJ or increased RG 250 600 900 950 6 25 0.05 1000 A pF pF pF
M4 screws (4x) supplied
nC nC nC ns ns ns ns mJ ns ns ns ns ns mJ mJ 0.25 K/W K/W
Dim. A B C D E F G H J K L M N O P Q R S T U
Millimeter Min. Max. 31.50 7.80 4.09 4.09 4.09 14.91 30.12 38.00 11.68 8.92 0.76 12.60 25.15 1.98 4.95 26.54 3.94 4.72 24.59 -0.05 31.88 8.20 4.29 4.29 4.29 15.11 30.30 38.23 12.22 9.60 0.84 12.85 25.42 2.13 5.97 26.90 4.42 4.85 25.07 0.1
Inches Min. Max. 1.240 0.307 0.161 0.161 0.161 0.587 1.186 1.496 0.460 0.351 0.030 0.496 0.990 0.078 0.195 1.045 0.155 0.186 0.968 -0.002 1.255 0.323 0.169 0.169 0.169 0.595 1.193 1.505 0.481 0.378 0.033 0.506 1.001 0.084 0.235 1.059 0.174 0.191 0.987 0.004
(c) 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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